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07/20/10 www.irf.com 1 auirfb4610AUIRFS4610 hexfet power mosfet s d g d 2 pak AUIRFS4610 to-220ab auirfb4610 s d g d s d g d automotive grade specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieveextremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. description advanced process technology ultra low on-resistance enhanced dv/dt and di/dt capability 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * features hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v ( br ) dss 100v r ds ( on ) typ. 11m max. 14m i d 73a gds gate drain source absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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"! parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case CCC 0.77 r cs case-to-sink, flat greased surface , to-220 0.50 CCC c/w r ja junction-to-ambient, to-220 CCC 62 r ja junction-to-ambient (pcb mount) , d 2 pak CCC 40 10lbf in (1.1n m) 300 max. 7352 290 a c 370 see fig. 14, 15, 16a, 16b, 190 7.6 -55 to + 175 20 1.3 downloaded from: http:///

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.39mh r g = 25 , i as = 44a, v gs =10v. part not recommended for use above this value. i sd 44a, di/dt 660a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%. s d g c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . when mounted on 1" square pcb (fr-4 or g-10 material). for recom mended footprint and soldering techniques refer to application note #an-994. *+'( static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown volta g e 100 CCC CCC v ? v (br)dss / ? t j breakdown volta g e temp. coefficient CCC 0.085 CCC v/c r ds(on) static drain-to-source on-resistance CCC 11 14 m v gs(th) gate threshold volta g e 2.0 CCC 4.0 v g fs forward transconductance 73 CCC CCC s r g gate input resistance CCC 1.5 CCC f = 1mhz, open drain i dss drain-to-source leaka g e current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leaka g e CCC CCC 200 gate-to-source reverse leaka g e CCC CCC -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate char g e CCC 90 140 q gs gate-to-source char g e CCC 20 CCC q gd gate-to-drain ("miller") char g e CCC 36 CCC t d(on) turn-on delay time CCC 18 CCC t r rise time CCC 87 CCC t d(off) turn-off delay time CCC 53 CCC t f fall time CCC 70 CCC c iss input capacitance CCC 3550 CCC c oss output capacitance CCC 260 CCC c rss reverse transfer capacitance CCC 150 CCC c oss eff. (er) effective output capacitance (ener g y related) CCC 330 CCC c oss eff. (tr) effective output capacitance (time related) CCC 380 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward volta g e CCC CCC 1.3 v t rr reverse recovery time CCC 35 53 t j = 25c v r = 85v, CCC 42 63 t j = 125c i f = 44a q rr reverse recovery char g e CCC 44 66 t j = 25c di/d t = 100a/ s CCC 65 98 t j = 125c i rrm reverse recovery current CCC 2.1 CCC a t j = 25c t on forward turn-on time intrinsic turn-on time is ne g li g ible (turn-on is dominated by ls+ld) conditions v ds = 50v, i d = 44a i d = 44a v gs = 20v v gs = -20v mosfet symbol showing the v ds = 80v conditions v gs = 10v v gs = 0v v ds = 50v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 80v , see fig.11 v gs = 0v, v ds = 0v to 80v t j = 25c, i s = 44a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 44a v ds = v gs , i d = 100a v ds = 100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c i d = 44a r g = 5.6 v gs = 10v v dd = 65v ana nc ns pf a 73 290 ns nc CCC CCC CCCCCC downloaded from: http:///

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qualification information ? to-220ab n/a d 2 pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c3 (750v) (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m4(400v) (per aec-q101-002) human body model class h1c(2000v) (per aec-q101-001) downloaded from: http:///

4 www.irf.com fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 140 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v vds= 50v vds= 20v i d = 44a -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 73a v gs = 10v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 175c 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v downloaded from: http:///

www.irf.com 5 fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. draincurrent 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t j , junction temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 100 105 110 115 120 125 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e 0 20 40 60 80 100 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 400 800 1200 1600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.6a 6.3a bottom 44a 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc downloaded from: http:///

6 www.irf.com 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature ri (c/w) i (sec) 0.4367 0.0010160.3337 0.009383 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri notes on repetitive avalanche curves , figures 14, 15:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far inexcess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long as neither t jmax nor i av (max) is exceeded. 3. equation below based on circuit and waveforms shown in figures 22a, 22b.4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15).t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 44a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///

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-75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a id = 100a 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 4 8 12 16 i r r m - ( a ) i f = 44a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 4 8 12 16 i r r m - ( a ) i f = 29a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 100 200 300 q r r - ( n c ) i f = 44a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 100 200 300 q r r - ( n c ) i f = 29a v r = 85v t j = 125c t j = 25c downloaded from: http:///

8 www.irf.com fig 23a. switching time test circuit fig 23b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 24a. gate charge test circuit fig 24b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 21. )*+ &%&
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period , , -&,! . . / , + - + + + - - - , ? ! ? "#$## ? % && ? #$##'$
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3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. downloaded from: http:///

12 www.irf.com ordering information base p art packa g e t yp e standard pac k com p lete part number form quantit y auirfb4610 to-220 tube 50 auirfb4610 AUIRFS4610 d2pak tube 50 AUIRFS4610 tape and reel left 800 AUIRFS4610strl tape and reel right 800 AUIRFS4610strr downloaded from: http:///

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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any tim e and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive indus try and / or customer specific requirements with regards to product discontinuance and process change notification. all products ar e sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment.ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. exc ept where mandated by government requirements, testing of all parameters of each product is not necessarily performed.ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provideadequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business p ractice. ir is not responsible or liable for any such statements.ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, aff iliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim al leges that ir was negligent regarding the design or manufacture of the product.ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade me et military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military - grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyersacknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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